This article provides a comprehensive review of wide and ultrawide bandgap power electronic semiconductor devices, comparing silicon (Si), silicon carbide (SiC), gallium nitride (GaN), and the emerging device diamond technology.Key parameters examined include bandgap, critical electric field, electron mobility, voltage/current ratings, switching fr

In this research, the normalization performance of the proposed adjusted min-max methods was compared to the normalization performance of statistical column, decimal scaling, adjusted decimal scaling, and min-max methods, in terms of accuracy and mean square error of the final classification outcomes.The evaluation process employed an artificial ne